Orbitally Matched Edge-Doping in Graphene Nanoribbons

Graphene nanoribbons and edge reconstructions

Edge magnetotransport fingerprints in disordered graphene nanoribbons

Jean-Marie Poumirol,1 Alessandro Cresti,2,* Stephan Roche,3,4 Walter Escoffier,1 Michel Goiran,1 Xinran Wang,5 Xiaolin Li,5 Hongjie Dai,5 and Bertrand Raquet1 1Laboratoire National des Champs Magnétiques Intenses, INSA UPS CNRS, UPR 3228, Université de Toulouse, 143 avenue de Rangueil, 31400 Toulouse, France 2LETI, MINATEC, CEA, F38054 Grenoble, France 3INAC, SP2M, Lsim, CEA, 17 avenue des Mart...

Stability of edge states and edge magnetism in graphene nanoribbons

Jens Kunstmann,1,* Cem Özdoğan,2 Alexander Quandt,3,4 and Holger Fehske3 1Institute for Materials Science, TU Dresden, Hallwachstr. 3, D-01069 Dresden, Germany 2Department of Materials Science and Engineering, Çankaya University, Balgat, TR-06530 Ankara, Turkey 3Institut für Physik der Universität Greifswald, Felix–Hausdorff-Str. 6, D-17489 Greifswald, Germany 4School of Physics and DST/NRF Cen...

Atomically controlled substitutional boron-doping of graphene nanoribbons

Boron is a unique element in terms of electron deficiency and Lewis acidity. Incorporation of boron atoms into an aromatic carbon framework offers a wide variety of functionality. However, the intrinsic instability of organoboron compounds against moisture and oxygen has delayed the development. Here, we present boron-doped graphene nanoribbons (B-GNRs) of widths of N=7, 14 and 21 by on-surface...

Aligning the band gap of graphene nanoribbons by monomer doping.

Silicon-based field-effect transistors (FETs) are the building blocks of modern digital logic circuitry and therefore part of virtually every electronic device available today. Over the past decades, continuous downscaling of existing designs has met the rising performance requirements, but as the size of FETs approaches the regime of atomic structures, new concepts are required to maintain the...